FDP083N15A_f102 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDP083N15A_f102 rev. a2 www.fairchildsemi.com 1 april 2011 d g s to-220 g d s FDP083N15A_f102 n-channel powertrench ? mosfet 150v, 105a, 8.3m features ? r ds(on) = 6.85m ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semi- conductors advanced powertrench process that has been especially tailored to minimize the on-state resistance a nd yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for server/telecom psu ? battery charger ? ac motor drives and uninterruptible power supplies ? off-line ups mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 150 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 105 a - continuous (t c = 100 o c, silicon limited) 75 i dm drain current - pulsed (note 1) 420 a e as single pulsed avalanche energy (note 2) 542 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 231 w - derate above 25 o c 1.54 w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.65 o c/w r ja thermal resistance, junction to ambient 62.5 *package limitation current is 120a.
FDP083N15A_f102 n-channel powertrench ? mosfet FDP083N15A_f102 rev. a2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package description quantity FDP083N15A FDP083N15A_f102 to-220 f102: trimmed leads 5 0 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 150 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.08 - v/ o c i dss zero gate voltage drain current v ds = 120v, v gs = 0v - - 1 a v ds = 120v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 6.85 8.30 m g fs forward transconductance v ds = 10v, i d = 75a (note 4) - 139 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 4645 6040 pf c oss output capacitance - 1445 1880 pf c rss reverse transfer capacitance - 100 - pf q g(tot) total gate charge at 10v v ds = 75v, i d = 75a v gs = 10v - 64.5 84 nc q gs gate to source gate charge - 19.1 - nc q gs2 gate charge threshold to plateau - 8.7 - nc q gd gate to drain miller charge - 13.5 - nc esr equivalent series resistance(g-s) drain open, f=1mhz - 2.5 - t d(on) turn-on delay time v dd = 75v, i d = 75a v gs = 10v, r gen = 4.7 - 22 54 ns t r turn-on rise time - 58 126 ns t d(off) turn-off delay time - 61 132 ns t f turn-off fall time - 26 62 ns i s maximum continuous drain to source diode forward curr ent - - 105 a i sm maximum pulsed drain to source diode forward current - - 420 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 75a, v dd = 120v di f /dt = 100a/ s - 96 - ns q rr reverse recovery charge - 268 - nc notes: 1. repetitive rating: pulse width limited by maximum ju nction temperature 2. starting t j = 25 c, l = 3 mh, i sd = 19 a 3. i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typ ical characteristics
FDP083N15A_f102 n-channel powertrench ? mosfet FDP083N15A_f102 rev. a2 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2 3 4 5 6 1 10 100 300 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 10 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 6.5v 6.0v 5.5v 5.0v 0.0 0.5 1.0 1.5 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 100 200 300 400 4 6 8 10 12 14 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0.1 1 10 30 50 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 25 50 75 0 2 4 6 8 10 *note: i d = 75a v ds = 30v v ds = 75v v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP083N15A_f102 n-channel powertrench ? mosfet FDP083N15A_f102 rev. a2 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 0.1 1 10 100 300 0.1 1 10 100 1000 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 25 50 75 100 125 150 175 0 20 40 60 80 100 120 i d , drain current [a] t c , case temperature [ o c ] 0.001 0.01 0.1 1 10 100 1000 1 10 50 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) if r = 0 t av = (l)(i as )/(1.3*rated bv dss -v dd ) if r = 0 t av = (l/r)in[(i as *r)/(1.3*rated bv dss -v dd )+1]
FDP083N15A_f102 n-channel powertrench ? mosfet FDP083N15A_f102 rev. a2 www.fairchildsemi.com 5 typical performance characteristics 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.65 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 figure 12. transient thermal response curve
FDP083N15A_f102 n-channel powertrench ? mosfet FDP083N15A_f102 rev. a2 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
FDP083N15A_f102 n-channel powertrench ? mosfet FDP083N15A_f102 rev. a2 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP083N15A_f102 n-channel powertrench ? mosfet FDP083N15A_f102 rev. a2 www.fairchildsemi.com 8 dimensions in millimeters mechanical dimensions to-220 (f102: trimmed leads)
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